View SPA11N60CFD_4599222.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SPA11N60CFD coolmos tm power transistor features ? new revolutionary high voltage technology ? intrinsic fast-recovery body diode ? extremely low reverse recovery charge ? ultra low gate charge ? extreme d v /d t rated ? high peak current capability ? periodic avalanche rated ? qualified for industrial grade applications according to jedec 0) maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =5.5 a, v dd =50 v 340 mj avalanche energy, repetitive 2),3) e ar i d =11 a, v dd =50 v avalanche current, repetitive 2),3) i ar a drain source voltage slope d v /d t i d =11 a, v ds =480 v, t j =125 c v/ns reverse diode d v /d t d v /d t v/ns maximum diode commutation speed d i /d t a/s gate source voltage v gs static v ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c 600 11 80 i s =11 a, v ds =480 v, t j =125 c 20 30 33 -55 ... 150 0.6 40 value 11 7 28 v ds 600 v r ds(on),max 0.44 " i d 1) 11 a product summary type package ordering code marking SPA11N60CFD to-220-3-31 sp000216317 11n60cfd pg-to220-3-31 rev. 1.4 page 1 2010-12-21
SPA11N60CFD parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 3.8 k/w r thja leaded - - 62 soldering temperature, wave solderin g t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v avalanche breakdown voltage v (br)ds v gs =0 v, i d =11 a - 700 - gate threshold voltage v gs(th) v ds = v gs , i d =1.9 ma 3 4 5 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c - 1.1 - a v ds =600 v, v gs =0 v, t j =150 c - 900 - gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =7 a, t j =25 c - 0.38 0.44 " v gs =10 v, i d =7 a, t j =150 c - 1.02 - gate resistance r g f =1 mhz, open drain - 0.86 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =7 a - 8.3 - s values thermal resistance, junction - ambient rev. 1.4 page 2 2010-12-21
SPA11N60CFD parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1200 - pf output capacitance c oss - 390 - reverse transfer capacitance c rss - 30 - effective output capacitance, energy related 4) c o(er) - 45 - effective output capacitance, time related 5) c o(tr) - 85 - turn-on delay time t d(on) - 34 - ns rise time t r - 18 - turn-off delay time t d(off) - 43 - fall time t f - 7 - gate charge characteristics gate to source charge q gs - 9 - nc gate to drain charge q gd - 23 - gate charge total q g - 48 64 gate plateau voltage v plateau - 7.5 - v 1) limited only by maximum temperature. 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 4) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. 5) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 0) j-std20 and jesd22 2) pulse width t p limited by t j,max values v gs =0 v, v ds =25 v, f =1 mhz v dd =480 v, v gs =10 v, i d =11 a, r g =6.8 " v dd =480 v, i d =11 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v rev. 1.4 page 3 2010-12-21
SPA11N60CFD parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current 1) i s - - 11 a diode pulse current 2) i s,pulse - - 28 diode forward voltage v sd v gs =0 v, i f =11 a, t j =25 c - 1.0 1.2 v reverse recovery time t rr - 140 - ns reverse recovery charge q rr - 0.7 - c peak reverse recovery current i rrm - 11 - a typical transient thermal characteristics v r =480 v, i f = i s , d i f /d t =100 a/s t c =25 c values symbol value unit symbol value unit typ. typ. r th1 0.0178 k/w c th1 0.0000989 ws/k r th2 0.0931 c th2 0.000939 r th3 0.228 c th3 0.00303 r th4 0.559 c th4 0.0245 r th5 1.58 c th5 0.951 rev. 1.4 page 4 2010-12-21
SPA11N60CFD 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: t p = 10s v gs 0 5 10 15 20 25 30 35 0 40 80 120 160 t c [c] p t o t [ w ] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [ a ] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z t h j c [ k / w ] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 20 v 0 5 10 15 20 25 30 35 0 5 10 15 20 v ds [v] i d [ a ] limited by on-state resistance rev. 1.4 page 5 2010-12-21
SPA11N60CFD 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: t p = 10s v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =7 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.2 0.4 0.6 0.8 1 1.2 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ ] c 25 c 150 0 10 20 30 40 0 2 4 6 8 10 12 v gs [v] i d [ a ] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 20 v 0 5 10 15 20 0 5 10 15 20 v ds [v] i d [ a ] 5 v 5.5 v 6 v 6.5 v 7 v 10 v 20 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 10 12 i d [a] r d s ( o n ) [ ] rev. 1.4 page 6 2010-12-21
SPA11N60CFD 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =11 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche soa 12 avalanche energy i ar =f( t ar ) e as =f( t j ); i d =5.5 a; v dd =50 v parameter: t j(start) 0 50 100 150 200 250 300 350 20 60 100 140 180 t j [c] e a s [ m j ] 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [ a ] 125 c 25 c 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 1 2 3 4 5 6 7 8 9 10 11 t ar [s] i a v [ a ] 120 v 480 v 0 2 4 6 8 10 12 0 10 20 30 40 50 q gate [nc] v g s [ v ] rev. 1.4 page 7 2010-12-21
SPA11N60CFD 13 drain-source breakdown voltage 14 typ. capacitances v br(dss) =f( t j ); i d =10 ma c =f( v ds ); v gs =0 v; f =1 mhz 15 typ. c oss stored energy 16 typ. reverse recovery charge e oss = f (v ds ) q rr =f( t j );parameter: i d =11 a 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [ p f ] 0 1 2 3 4 5 6 7 8 0 100 200 300 400 500 600 v ds [v] e o s s [ j ] 0.6 0.7 0.8 0.9 1 1.1 1.2 25 50 75 100 125 t j [c] q r r [ c ] rev. 1.4 page 8 2010-12-21
SPA11N60CFD 17 typ. reverse recovery charge 18 typ. reverse recovery charge q rr =f( i s ); parameter: d i/ d t =100 a/s q rr =f(d i /d t ); parameter: i d =11 a 25 c 125 c 0.2 0.4 0.6 0.8 1 1.2 1 3 5 7 9 11 i s [a] q r r [ c ] 25 c 125 c 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 100 300 500 700 900 di/ d t [a/s] q r r [ c ] rev. 1.4 page 9 2010-12-21
SPA11N60CFD definition of diode switching characteristics rev. 1.4 page 10 2010-12-21
SPA11N60CFD pg-to-220-3-31 (fullpak) rev. 1.4 page 11 2010-12-21
SPA11N60CFD published by infineon technologies ag d-81726 mnchen, germany ? infineon technologies ag 2006 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.4 page 12 2010-12-21

▲Up To Search▲

Price & Availability of SPA11N60CFD

	To Download SPA11N60CFD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .